RJU36B2WDPK-M0 Datasheet - Renesas

Dual Diode Ultra Fast Recovery Diode

RJU36B2WDPK-M0 Features

* Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 20 A, di/dt = 100 A/s)

* Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)

* Low reverse current: IR = 1 A max. (at VR = 360 V) R07DS0668EJ0100 Rev.1.00 Mar 01, 2012 Outline RENESAS Package code: PRSS0004ZH-A (Package nam

RJU36B2WDPK-M0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJU36B2WDPK-M0 Datasheet (113.00 KB)