RMQS3A1818DGBA, RMQS3A1836DGBA - 18-Mbit QDR-II SRAM

Renesas

RMQS3A1818DGBA Datasheet Preview — This datasheet PDF includes multiple part numbers: RMQS3A1818DGBA, RMQS3A1836DGBA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	RMQS3A1818DGBA, RMQS3A1836DGBA
Manufacturer	Renesas ↗
File Size	855.13 KB
Description	18-Mbit QDR-II SRAM
Datasheet	RMQS3A1836DGBA-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: RMQS3A1818DGBA, RMQS3A1836DGBA. Please refer to the document for exact specifications by model.

RMQS3A1818DGBA Product details

Description

The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Features

Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
Clock z z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart.
I/O z z z z z Separate independent read and write data.

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