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TP70H300G4LSG - 700V GaN FET

Renesas

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Datasheet Details

Part number	TP70H300G4LSG
Manufacturer	Renesas
File Size	836.27 KB
Description	700V GaN FET
Datasheet	TP70H300G4LSG-Renesas.pdf

TP70H300G4LSG Product details

Description

The TP70H300G4LSG 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by:.
Transient over-voltage capability.
Operation with E-mode gate drivers without need for Zener protection.
Zero reverse recovery charge.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging.
2kV HBM ESD rating.

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Published: Oct 27, 2025 |