UPA2719AGR

P-CHANNEL POWER MOS FET

Renesas

* Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS =

* 10 V, ID =

* 5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS =

* 4.5 V, ID =

* 5.0 A)

* Low input capacitance Ciss = 2010 pF TYP.

* Built-in gate protection diode

* Small and surface mount packag

UPA2719AGR

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P-channel power mos fet.

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UPA2719AGR P-CHANNEL POWER MOS FET Renesas

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