BD14000EFV-C Datasheet, cells equivalent, Rohm

BD14000EFV-C Features

  • Cells circuit Cell Balance LSI of 4 to 6 Series Power Storage Element Cells for Automotive BD14000EFV-C General Description BD14000EFV is a LSI IC designed as a self-controlled cell balance

PDF File Details

Part number:

BD14000EFV-C

Manufacturer:

ROHM ↗

File Size:

933.02kb

Download:

📄 Datasheet

Description:

Cell balance lsi of 4 to 6 series power storage element cells. BD14000EFV is a LSI IC designed as a self-controlled cell balancer. It has a built-in shunt-type power storage element balancer funct

Datasheet Preview: BD14000EFV-C 📥 Download PDF (933.02kb)
Page 2 of BD14000EFV-C Page 3 of BD14000EFV-C

BD14000EFV-C Application

  • Applications Renewable energy power storage for Automotive, Production machinery, Building machinery, etc. UPS and other devices that stabilizes pow

TAGS

BD14000EFV-C
Cell
Balance
LSI
Series
Power
Storage
Element
Cells
Rohm

📁 Related Datasheet

BD140 - Transistor (STMicroelectronics)
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos.

BD140 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
BD136 / BD138 / BD140 — PNP Epitaxial Silicon Transistor March 2015 BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor Features • Complement to.

BD140 - Plastic Medium Power Silicon PNP Transistor (ON Semiconductor)
PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F.

BD140 - Silicon PNP Transistor (Toshiba)
BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1.

BD140 - PNP SILICON TRANSISTOR (UTC)
UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION The UTC BD136/BD138/BD140 are s.

BD140 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD140 DESCRIPTION ·DC Current Gain- : hFE= 63(Min)@ IC= -0.15A ·Collector-Emitter Sustaining.

BD140 - SILICON PNP Transistor (Toshiba)
BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1.

BD140-10 - Plastic Medium Power Silicon PNP Transistor (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD136/D Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio am.

BD140G - Plastic Medium-Power Silicon PNP Transistors (ON Semiconductor)
BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium−power silicon PNP transistors are designed for use.

BD141 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD141 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(B.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts