C5868
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C5863 - Silicon NPN Transistor
(Panasonic)
Transistors
2SC5863
Silicon NPN epitaxial planar type
For general amplification
0.40+–00..0150 3
Unit: mm 0.16+–00..0160
1.50–+00..0255 2.8–+00..32.
C580 - VCO Model
(Z-Communications)
.
C5800 - NPN SILICON RF TRANSISTOR
(Renesas)
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5800
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FE.
C5801 - 2SC5801
(NEC)
..
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5801
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
FE.
C5802 - Silicon NPN Power Transistor
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Wide area .
C5802D - KSC5802D
(Fairchild Semiconductor)
KSC5802D
KSC5802D
High Voltage Color Display Horizontal Deflection Output (Built In Damper Diode)
• • .. • • High Breakdown Voltage .
C5803 - KSC5803
(KEC)
..
KSC5803
KSC5803
High Voltage Color Display Horizontal Deflection Output (No Damper Diode)
• • • • High Breakdown Voltage : BVCBO.
C5803 - 2SC5803
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5803
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·.
C5803D - KSC5803
(KEC)
..
KSC5803D
KSC5803D
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In)
• • • • High Breakdown Voltage.
C5804 - 2SC5804
(Isahaya Electronics Corporation)
..
〈SMALL-SIGNAL TRANSISTOR〉
2SC5804
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION
2SC5804 is a supe.