EMD2 Datasheet, Transistors), Rohm

EMD2 Features

• Transistors) 1) Both the DTA124E chip and DTC124E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT6 or UMT6 or SMT6 automatic mounting machines. 3) Transistor elements are independ

PDF File Details

Part number:

EMD2

Manufacturer:

ROHM ↗

File Size:

83.59kb

Download:

📄 Datasheet

Description:

General purpose (dual digital transistors).

TAGS

EMD2

Rohm

📁 Related Datasheet

EMD02N06E - MOSFET (Excelliance MOS)
EMD02N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 3.1mΩ ID 191A G UIS, Rg .

EMD02N06TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 60V RDSON (MA.

EMD02N10TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (TYP.)@VGS=10V .

EMD02N60A - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S .

EMD02N60AK - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.0Ω ID 2A G UIS, 100% Tested S .

EMD02N60CS - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S .

EMD02N60CSK - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.0Ω ID 2A G UIS, 100% Tested S .

EMD02N60F - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S .

EMD02N70CS - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 700V D RDSON (MAX.) 6Ω ID 2A G UIS, 100% Tested S Pb.

EMD03N05HS - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  50V  D RDSON (MAX.)  3.5mΩ  ID  85A  G   UIS, Rg .