NE2002-VA10A Datasheet, Mm), Rohm

NE2002-VA10A Features

• Mm) 1) Inclined toward the printing surface to provide excellent printing quality even for cards and thick paper. 2) Prints directly on printing medium that cannot be bent. 3) Using a hard

PDF File Details

Part number:

NE2002-VA10A

Manufacturer:

ROHM ↗

File Size:

215.28kb

Download:

📄 Datasheet

Description:

Near edge thermal printhead (8 dots / mm).

NE2002-VA10A Application

• Applications Bar code label printers Card printers Ticket printers General purpose compact printers FFeatures 1) Inclined toward the printing surfac

TAGS

NE2002-VA10A

Rohm

📁 Related Datasheet

NE2001-VA20 - Near edge thermal printhead (8 dots / mm) (Rohm)
Printheads Near edge thermal printhead (8 dots / mm) NE2001-VA20A The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi.

NE2001-VA20A - Near edge thermal printhead (8 dots / mm) (Rohm)
Printheads Near edge thermal printhead (8 dots / mm) NE2001-VA20A The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi.

NE2004-VA10A - Near edge thin film thermal printhead (8 dots / mm) (Rohm)
Printheads Near edge thin film thermal printhead (8 dots / mm) NE2004-VA10A The NE2004–VA10A is a near edge thin–film thermal printhead, where the pr.

NE202 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

NE20248 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

NE20283A - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

NE202930 - Silicon NPN Epitaxial High Frequency Transistor (Renesas)
PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for .

NE202XX - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

NE202XX-1.4 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)
.

NE219 - NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
.