RB530S-30 - Schottky Barrier Diode

Product Overview

Rohm

Part number	RB530S-30
Manufacturer	ROHM
File Size	371.35 KB
Description	Schottky Barrier Diode
Datasheet	RB530S-30 Datasheet
Additional preview pages of the RB530S-30 datasheet.

1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability 0.6 EMD2.
Construction Silicon epitaxial planer.
Structure.
Taping specifications (Unit : mm).
Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg.
Electical characteristics (Ta=25C) Parameter Forward voltage Reverse current Limits 30 100 500 125 -40 to +125.

📁 Similar Datasheet

Other Datasheets by Rohm

Published: Jul 27, 2010 |