* 1) Cathode common type. 2) Low IR 3) High reliability 1 Anode Cathode Anode for d lConstruction de Silicon epitaxial planar 1.2 1.3 0.8 (1) (2) (3) ROHM TO220FN 1 Manufacture Date 0.7±0.1 0.05 2.6±0.5 ommeensigns lAbsolute maximum ratings (Tc= 25°C) D Parameter Symbol Limits Unit c R
RBQ30T65A Datasheet (457.22 KB)
RBQ30T65A
457.22 KB
Schottky barrier diode.
Schottky Barrier Diode
RBQ30T65A
Datasheet
lApplication
lDimensions (Unit : mm)
lStructure
General rectification
4.5±0.3
0.1
10.0±0.3 .
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