RDN080N25 Datasheet, Transistors, Rohm

RDN080N25 Features

  • Transistors 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. zApplication Switching zStructure Silicon N-channel MOS FET zExternal dimensio

PDF File Details

Part number:

RDN080N25

Manufacturer:

ROHM ↗

File Size:

50.23kb

Download:

📄 Datasheet

Description:

Transistors.

Datasheet Preview: RDN080N25 📥 Download PDF (50.23kb)
Page 2 of RDN080N25 Page 3 of RDN080N25

TAGS

RDN080N25
Transistors
Rohm

📁 Related Datasheet

RDN050N20 - 10V Drive Nch MOS FET (Rohm)
Transistors 10V Drive Nch MOS FET RDN050N20 RDN050N20 zStructure Silicon N-channel MOS FET zFeatures 1) Low on-resistance. 2) Low input capacitance..

RDN100N20 - Switching (200V/ 10A) (Rohm)
RDN100N20 Transistors Switching (200V, 10A) RDN100N20 Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from.

RDN120N25 - Switching (Rohm)
RDN120N25 Transistors Switching (250V, 12A) RDN120N25 zFeatures 1) Low on-resistance. .. 2) Low input capacitance. 3) Exellent resis.

RDN150N20 - Switching (Rohm)
RDN150N20 Transistors Switching (200V, 15A) RDN150N20 Features 1) Low on-resistance. .. 2) Low input capacitance. 3) Exellent resis.

RD-19230 - 16-Bit Monolithic Tracking Resolver to Digital Converter (Data Device)
.. Make sure the next Card you purchase has ® RD-19230 16-BIT MONOLITHIC TRACKING RESOLVER-TO-DIGITAL CONVERTER FEATURES • Accu.

RD-624 - Pyroelectric Infrared Sensor (Winsen)
Pyroelectric Infrared Sensor (Model:RD-624) User’s Manual Version: 1.2 Valid from: 2016-03-01 Zhengzhou Winsen Electronics Technology Co., Ltd Statem.

RD-XS27KR - Manual (Toshiba)
E2G70RD_RU.book Page 1 Monday, July 30, 2007 2:32 PM Введение Подключения HDD И DVD ВИДЕОМАГНИТОФОН RD-XS27KR Руководство пользователя Основная на.

RD00HHS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0..

RD00HVS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Complian.

RD0106T - High-Speed Switching Diode (Sanyo Semicon Device)
.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode.

Stock and price

ROHM Semiconductor
MOSFET N-CH 250V 8A TO220FN
DigiKey
RDN080N25FU6
0 In Stock
Qty : 500 units
Unit Price : $1.22
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts