RDS070N03

Excellent Resistance to damage from static electricity

Rohm

* 1) Low Qg. 2) Low on-resistance. 3) Excellent resistance to damage from static electricity. zExternal dimensions (Units : mm) +0.1 0.4

* 0.1 1.27 0.15 +0.1 1.5

* Max.1.75 +0.2 5.0

* (5) (4) zStructure Silicon N-channel MOS FET (8) +0.15 3.9

* +0.3 6.0

* +0.1

RDS070N03

69.67 KB

Excellent resistance to damage from static electricity.

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