RU20120L
Features
- 20V/120A,
RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V
- Super High Dense Cell Design
- Reliable and Rugged
- 100% avalanche tested
- 175°C Operating Temperature
- Lead Free and Green Devices Available (Ro HS pliant)
Pin Description
Applications
- Power Management
- DC-DC Converters
TO252
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd Rev. A- DEC., 2012
N-Channel MOSFET
Rating
Unit
TC=25°C
20 ±20 175 -55 to 175...
