RU20120L Datasheet - Ruichips

RU20120L N-Channel Advanced Power MOSFET

Applications * Power Management * DC-DC Converters TO252 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Contin.

RU20120L Features

* 20V/120A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Reliable and Rugged

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Compliant) Pin Descriptio

RU20120L-Ruichips.pdf