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RU20120L

N-Channel Advanced Power MOSFET

RU20120L Features

* 20V/120A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Reliable and Rugged

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Compliant) Pin Descriptio

RU20120L General Description

Applications

* Power Management

* DC-DC Converters TO252 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Contin.

RU20120L Datasheet (284.47 KB)

Preview of RU20120L PDF

Datasheet Details

Part number:

RU20120L

Manufacturer:

Ruichips

File Size:

284.47 KB

Description:

N-channel advanced power mosfet.

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RU20120L N-Channel Advanced Power MOSFET Ruichips

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