RU40L10L
Ruichips
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P-channel advanced power mosfet. TO252 Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-So
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RU40L10H - P-Channel Advanced Power MOSFET
(Ruichips)
RU40L10H
P-Channel Advanced Power MOSFET
MOSFET
Features
• -40V/-9.5A, RDS (ON) =19mΩ (Typ.) @ VGS=-10V RDS (ON) =30mΩ (Typ.) @ VGS=-4.5V
• Super Hig.
RU40120M - N-Channel Advanced Power MOSFET
(Ruichips)
RU40120M
N-Channel Advanced Power MOSFET
Features
• 40V/120A,
RDS (ON) =2.7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance .
RU40120R - N-Channel Advanced Power MOSFET
(Ruichips)
RU40120R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/120A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resi.
RU40120S - N-Channel Advanced Power MOSFET
(Ruichips)
RU40120S
N-Channel Advanced Power MOSFET
Features
• 40V/120A,
RDS (ON) =3.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance .
RU40130R - N-Channel Advanced Power MOSFET
(Ruichips)
RU40130R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/135A, RDS (ON) =3.2mΩ (Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Res.
RU40150R - N-Channel Advanced Power MOSFET
(Ruichips)
RU40150R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/150A, RDS (ON) =3mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resist.
RU40150S - N-Channel Advanced Power MOSFET
(Ruichips)
RU40150S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/150A, RDS (ON) =3mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resist.
RU40190Q2 - N-Channel Advanced Power MOSFET
(Ruichips)
RU40190Q2
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/190A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Res.
RU40190R - N-Channel Advanced Power MOSFET
(Ruichips)
RU40190R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/190A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resi.
RU40190S - N-Channel Advanced Power MOSFET
(Ruichips)
RU40190S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/190A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resi.