RU40L10L Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU40L10L, P-Channel Advanced Power MOSFET

TO252 Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S

RU40L10L Features

* -40V/-32A, RDS (ON) =20mΩ(Typ.)@VGS=-10V RDS (ON) =30mΩ(Typ.)@VGS=-4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power