RU75110S - N-Channel Advanced Power MOSFET

Ruichips

RU75110S Datasheet Preview — Preview of RU75110S PDF

Datasheet Details

Part number	RU75110S
Manufacturer	Ruichips
File Size	291.58 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU75110S-Ruichips.pdf

RU75110S Product details

Description

TO-263 Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance

Features

75V/110A, RDS (ON) =5.5mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

📁 RU75110S Similar Datasheet

Other Datasheets by Ruichips

RU75110Q - N-Channel Advanced Power MOSFET
RU75110R - N-Channel Advanced Power MOSFET
RU75150R - N-Channel Advanced Power MOSFET
RU75170S - N-Channel Advanced Power MOSFET
RU75210R - N-Channel Advanced Power MOSFET
RU75230S - N-Channel Advanced Power MOSFET

Published: Jan 29, 2016 |