RU7H2K - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU7H2K
Manufacturer	Ruichips
File Size	247.14 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU7H2K Datasheet
Additional preview pages of the RU7H2K datasheet.

Product details

Description

Applications High efficiency switch mode power supplies TO251 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Cas

Features

700V/2A, RDS (ON) =5000mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Fast Switching.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

📁 Similar Datasheet

RU75230S - N-Channel MOSFET (INCHANGE)

Other Datasheets by Ruichips

RU70100R - N-Channel Advanced Power MOSFET
RU70190R - N-Channel Advanced Power MOSFET
RU70200R - N-Channel Advanced Power MOSFET
RU7080L - N-Channel Advanced Power MOSFET
RU7080S - N-Channel Advanced Power MOSFET
RU7085R - N-Channel Advanced Power MOSFET

Published: Apr 26, 2016 |