MBRF3060CT - SCHOTTKY RECTIFIER

SANGDEST MICROELECTRONICS

Datasheet Details

Part number	MBRF3060CT
Manufacturer	SANGDESTMicroelectronics
File Size	110.73 KB
Description	SCHOTTKY RECTIFIER
Datasheet	MBRF3060CT-SANGDESTMICROELECTRONICS.pdf

150 °C T J operation.
Center tap configuration.
Low forward voltage drop.
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
High frequency operation.
Guard ring for enhanced ruggedness and long term reliability.
This is a Pb.
Free Device.
All SMC parts are traceable to the wafer lot.
Additional testing can be offered upon request.

📁 MBRF3060CT Similar Datasheet

MBRF3060CT-G - SCHOTTKY RECTIFIER (SENSITRON SEMICONDUCTOR)
MBRF3060CT-Y - Dual Common Cathode Schottky Rectifier (Taiwan Semiconductor)
MBRF3060 - Schottky Barrier Rectifiers (GME)
MBRF3065CT - 30A High Power Schottky Barrier Rectifiers (CITC)
MBRF300100 - Silicon Power Schottky Diode (America Semiconductor)
MBRF300100R - Silicon Power Schottky Diode (America Semiconductor)
MBRF300150 - Silicon Power Schottky Diode (GeneSiC)
MBRF300150R - Silicon Power Schottky Diode (GeneSiC)

Other Datasheets by SANGDEST MICROELECTRONICS

Published: Nov 29, 2015 |