SY2305

P-Channel logic enhancement mode power field effect transistors

SANY

SY2305 Features

* -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARK

SY2305 General Description

The SY2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

SY2305 Datasheet (1.40 MB)

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Datasheet Details

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SY2305

Manufacturer:

SANY

File Size:

1.40 MB

Description:

P-channel logic enhancement mode power field effect transistors.

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SY2305 P-Channel logic enhancement mode power field effect transistors SANY

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SY2305 Features

SY2305 General Description

Datasheet Details

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