SY2305 P-Channel logic enhancement mode power field effect transistors

SANY

Description

SY2305 .
The SY2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number: SY2305
Manufacturer: SANY
File Size: 1.40 MB
Datasheet: SY2305_SANY.pdf
Description: P-Channel logic enhancement mode power field effect transistors

Features

* -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARK

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SY2305 P-Channel logic enhancement mode power field effect transistors SANY

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