TIP120 Datasheet (SEMIHOW) - PNP Epitaxial Silicon Darlington Transistor

TIP120, PNP Epitaxial Silicon Darlington Transistor

TIP120/121/122 TIP120/121/122 ◎ SEMIHOW REV.A0,Oct 2007 TIP120/121/122 TIP120/121/122 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP120 : TIP121 : TIP122 VCBO