1SS176 Datasheet (SEMTECH) - SILICON EPITAXIAL PLANAR DIODE

1SS176, SILICON EPITAXIAL PLANAR DIODE

1SS176 Silicon Epitaxial Planar Switching Diode Applications High-speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Peak Reverse Voltage Average Rectified Forward Current Forward Voltage Surge Forward Current at t = 1s Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 100 mA, VR = 6 V, RL = 100 Ω