Datasheet4U Logo Datasheet4U.com

1SS176 Datasheet - SEMTECH

1SS176 SILICON EPITAXIAL PLANAR DIODE

1SS176 Silicon Epitaxial Planar Switching Diode Applications High-speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Peak Reverse Voltage Average Rectified Forward Current Forward Voltage Surge Forward Current at t = 1s Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 100 mA, VR = 6 V, RL = 100 Ω .

1SS176 Datasheet (143.64 KB)

Preview of 1SS176 PDF

Datasheet Details

Part number:

1SS176

Manufacturer:

SEMTECH

File Size:

143.64 KB

Description:

Silicon epitaxial planar diode.

📁 Related Datasheet

1SS176 SWITCHING DIODES (Leshan Radio Company)

1SS176 HIGH SPEED SWITCHING DIODE (EIC)

1SS176 SWITCHING DIODES (Toshiba)

1SS177 SWITCHING DIODES (Toshiba)

1SS178 HIGH SPEED SWITCHING DIODE (EIC)

1SS178 SWITCHING DIODES (Toshiba)

1SS101 SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)

1SS101 Mixer Diode (NEC)

1SS104 SILICON DIODE (Toshiba Semiconductor)

1SS106 Silicon Schottky Barrier Diode (Hitachi Semiconductor)

TAGS

1SS176 SILICON EPITAXIAL PLANAR DIODE SEMTECH

1SS176 Distributor