2SA1666U - PNP Transistor
2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Range 1) When mounted on a 250 mm2 x 0.8 t ceramic substrate. Symbol Value Unit -VCBO 50 V -VCEO 50 V -VEBO 5 V -IC 2 A -IB 0.4 A Ptot 0.5 1 1) W Tj 150 ℃ Tstg - 55 to + 150 ℃ Chara.