MMBT5551 Datasheet (SEMTECH)

MMBT5551, NPN Transistor

MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications.

Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=5V, IC=1mA at VCE=5V, IC=10mA at VCE=5V, IC=50mA Collector Emitter Breakdown Voltage at IC=1mA Collector Base Breakdown Voltage at IC=100µA Emit