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RB521G-30 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

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Part number RB521G-30
Manufacturer SEMTECH
File Size 146.70 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB521G-30 Datasheet
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Description

Cathode Anode 2 E Top View Marking Code: "E" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (60 Hz for 1 cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V Symbol VR IO IFSM Tj Ts Value 30 100 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max.0.35 10 Unit V µA Note: P

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