M74HC00
SGS-Ates
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Quad 2 input nand gate.
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M74HC00 - QUAD 2-INPUT NAND GATE
(ST Microelectronics)
M74HC00
QUAD 2-INPUT NAND GATE
s
s
s
s
s
s
s
HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NO.
M74HC00 - Quad 2 Input NAND Gate
(Mitsubishi)
.
M74HC02 - QUAD 2-INPUT NOR GATE
(ST Microelectronics)
M74HC02
QUAD 2-INPUT NOR GATE
s
s
s
s
s
s
s
HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOI.
M74HC03 - QUAD 2-INPUT OPEN DRAIN NAND GATE
(ST Microelectronics)
M74HC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
s
s
s
s
s
s
HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C.
M74HC04 - HEX INVERTER
(ST Microelectronics)
M74HC04
Hex inverter
Datasheet - production data
DIP14
SO14
TSSOP14
Features
High speed: tPD = 8 ns (typ.) at VCC = 6 V
Low power dissipatio.
M74HC05 - HEX INVERTER
(ST Microelectronics)
M74HC05
HEX INVERTER (OPEN DRAIN)
s
s
s
s
s
HIGH SPEED: tPD = 10ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOIS.
M74HC07 - HEX BUFFER
(ST Microelectronics)
M74HC07
HEX BUFFER (OPEN DRAIN)
s
s
s
s
s
HIGH SPEED: tPD = 6ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE I.
M74HC08 - QUAD 2-INPUT AND GATE
(ST Microelectronics)
M74HC08
Quad dual-input and gate
Datasheet - production data
SOP14
TSSOP14
Features
• High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power diss.
M74HC09 - QUAD 2-INPUT AND GATE
(ST Microelectronics)
M74HC09
QUAD 2-INPUT AND GATE (OPEN DRAIN)
s
s
s
s
s
s
HIGH SPEED: tPD = 7ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°.
M74HC10 - TRIPLE 3-INPUT NAND GATE
(ST Microelectronics)
M74HC10
TRIPLE 3-INPUT NAND GATE
s
s
s
s
s
s
s
HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH .
