BLH3355 Datasheet, TRANSISTOR, SHANGHAI BELLING

BLH3355 Features

• Transistor Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Size Ch

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BLH3355

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SHANGHAI BELLING

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📄 Datasheet

Description:

Npn epitaxial silicon rf transistor. NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High p

BLH3355 Application

• Applications UHF / VHF wide band amplifier Structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Size Chip size: 370µm ×370µm

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BLH3355

SHANGHAI BELLING

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