BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR

SHANGHAI BELLING

Description

www.DataSheet4U.com BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) .
NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applic.

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Datasheet Specifications

Part number: BLH3355
Manufacturer: SHANGHAI BELLING
File Size: 109.66 KB
Datasheet: BLH3355_SHANGHAIBELLING.pdf
Description: NPN EPITAXIAL SILICON RF TRANSISTOR

Applications

* UHF / VHF wide band amplifier Structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Size Chip size: 370µm ×370µm Chip thickness: 220±20µm. Pad size: φ100µm ABSOLUTE MAXIMUM RATING Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Parameter Collector to Base Voltage Collector to Emitter V

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BLH3355 NPN EPITAXIAL SILICON TRANSISTOR SHANGHAI BELLING

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