Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
Features
- 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V.
- Low gate charge ( typical 15nC).
- High ruggedness.
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F.
- ◀▲ {G.
- {S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Sour.
SLF3N80C Datasheet
