SLN1N60C - N-Channel MOSFET

Datasheet Details

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V.
Low gate charge ( typical 5.2nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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Published: Apr 11, 2017 |