SLN1N60C Datasheet (SL SEMI) - N-Channel MOSFET

SLN1N60C, N-Channel MOSFET

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

These devi

SLN1N60C Features

* 0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V

* Low gate charge ( typical 5.2nC)

* High ruggedness

* Fast wsitching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Dra