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SLN1N60C

N-Channel MOSFET

SLN1N60C Features

* 0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V

* Low gate charge ( typical 5.2nC)

* High ruggedness

* Fast wsitching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Dra

SLN1N60C General Description

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devi.

SLN1N60C Datasheet (140.33 KB)

Preview of SLN1N60C PDF

Datasheet Details

Part number:

SLN1N60C

Manufacturer:

SL SEMI

File Size:

140.33 KB

Description:

N-channel mosfet.

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SLN1N60C N-Channel MOSFET SL SEMI

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