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SVF2N60CD - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF2N60CD, a member of the SVF2N60CN 600V N-CHANNEL MOSFET family.

Description

SVF2N60CN/M/MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 2 1 123 3 TO-251D-3L 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L 12 3 TO-126-3L.
  • 2A,600V,RDS(on)(typ. )=3.7@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 13 TO-252-2L 12 3 TO-220F-3L.

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Datasheet preview – SVF2N60CD

Datasheet Details

Part number SVF2N60CD
Manufacturer SL
File Size 373.18 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF2N60CD Datasheet
Additional preview pages of the SVF2N60CD datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVF2N60CN/M/MJ/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60CN/M/MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2 1 123 3 TO-251D-3L 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L 12 3 TO-126-3L  2A,600V,RDS(on)(typ.)=3.
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