SVF2N60CD

600V N-CHANNEL MOSFET

SVF2N60CD Features

* 2 1 123 3 TO-251D-3L 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L 12 3 TO-126-3L

* 2A,600V,RDS(on)(typ.)=3.7@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 13 TO-252-2L 12 3 TO-220F-3L ORDERING INFORMATION Part No. SVF2N60CN SVF2N60CM S

SVF2N60CD General Description

SVF2N60CN/M/MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc.

SVF2N60CD Datasheet (373.18 KB)