2N3178 Datasheet, transistor equivalent, SSDI

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2N3171 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A .

2N3171H - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A .

2N3172 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A .

2N3173 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A .

2N3174 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A .

2N3175 - PNP Transistor (SSDI)
5 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mh.

2N3176 - PNP Transistor (SSDI)
5 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mh.

2N3177 - PNP Transistor (SSDI)
5 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mh.

2N3107 - NPN SILICON EPITAXIAL TRANSISTOR (Micro Electronics)
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2N3108 - Bipolar NPN Device (Semelab Plc)
www..com 2N3108 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically seale.