2N5347
SSDI
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Npn transistor.
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2N5344 - Silicon PNP Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2N5344
DESCRIPTION ·High Collector-Emitter Sustaining Voltage: V.
2N5344 - Bipolar PNP Device
(Seme LAB)
2N5344
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar PNP Device in a Hermetica.
2N5344A - Bipolar PNP Device
(Seme LAB)
2N5344A
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar PNP Device in a Hermetic.
2N5345 - High voltage power PNP silicon transistors
(ETC)
2N5344 (SILICON)
2N5345
~ . CASE80 , (T0-66) Collector connected to case
High voltage power PNP silicon transistors designed for high-voltage switc.
2N5345 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -280V(Min) ·High Switching Speed ·High Current-.
2N5345A - Bipolar PNP Device
(Seme LAB)
2N5345A
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetic.
2N5346 - MEDIUM-POWER NPN SILICON TRANSISTORS
(ETC)
53462N (SILICON)
thru
2N5349
MEDIUM-POWER NPN SILICON TRANSISTORS
· .. designed for switching and wide-band amplifier applications.
• Low Collector-E.
2N5346 - NPN Transistor
(SSDI)
7 AMP NPN
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mha.
2N5347 - MEDIUM-POWER NPN SILICON TRANSISTORS
(ETC)
53462N (SILICON)
thru
2N5349
MEDIUM-POWER NPN SILICON TRANSISTORS
· .. designed for switching and wide-band amplifier applications.
• Low Collector-E.
2N5348 - MEDIUM-POWER NPN SILICON TRANSISTORS
(ETC)
53462N (SILICON)
thru
2N5349
MEDIUM-POWER NPN SILICON TRANSISTORS
· .. designed for switching and wide-band amplifier applications.
• Low Collector-E.