* BVCBO = 250 V MIN
* 600 Watts Power Dissipation
* Excellent SOA Curve
* Es/b of 800mJ
* Gain of over 5 at 200A
* High Reliability Construction
* Planar Chip Construction with Low Leakage and Very Fast Switching
* TX, TXV, S-Level Scr
SFT2012
SSDI
68.93 KB
High energy npn transistor.
Solid State Devices, Inc.
14701 Firestone Blvd
* La Mirada, CA 90638 Phone: (562) 404-4474
* Fax: (562) 404-1773 ssdi@ssdi-power.com
* www.
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