SFT2012 - High Energy NPN Transistor
Solid State Devices, Inc.
14701 Firestone Blvd La Mirada, CA 90638 Phone: (562) 404-4474 Fax: (562) 404-1773 ssdi@ssdi-power.com www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT __ __ __ __ │ │ │ └ Screening 2/ __ = No Screening │ ││ TX = TX Level │ ││ TXV = TXV Level │ ││ S = S Level │ │ └ Lead Bend 3/ 4/ __ = Straight Leads ││ │ └ Package 3/ /3 = TO-3 0.060” pin └ Voltage/Family 2010 = 100V 2012 = 120V 2014 = 140V SFT2010 thru
SFT2012 Features
* BVCBO = 250 V MIN
* 600 Watts Power Dissipation
* Excellent SOA Curve
* Es/b of 800mJ
* Gain of over 5 at 200A
* High Reliability Construction
* Planar Chip Construction with Low Leakage and Very Fast Switching
* TX, TXV, S-Level Scr
