SFT2012 Datasheet - SSDI

SFT2012 High Energy NPN Transistor

Solid State Devices, Inc. 14701 Firestone Blvd La Mirada, CA 90638 Phone: (562) 404-4474 Fax: (562) 404-1773 ssdi@ssdi-power.com www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT __ __ __ __ │ │ │ └ Screening 2/ __ = No Screening │ ││ TX = TX Level │ ││ TXV = TXV Level │ ││ S = S Level │ │ └ Lead Bend 3/ 4/ __ = Straight Leads ││ │ └ Package 3/ /3 = TO-3 0.060” pin └ Voltage/Family 2010 = 100V 2012 = 120V 2014 = 140V SFT2010 thru .

SFT2012 Features

* BVCBO = 250 V MIN

* 600 Watts Power Dissipation

* Excellent SOA Curve

* Es/b of 800mJ

* Gain of over 5 at 200A

* High Reliability Construction

* Planar Chip Construction with Low Leakage and Very Fast Switching

* TX, TXV, S-Level Scr

SFT2012 Datasheet (68.93 KB)

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Datasheet Details

Part number:

SFT2012

Manufacturer:

SSDI

File Size:

68.93 KB

Description:

High energy npn transistor.

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