SST36VF1601E Datasheet (SST) - (SST36VF1601E / SST36VF1602E) 16 Mbit (x8/x16) Concurrent SuperFlash

SST36VF1601E, (SST36VF1601E / SST36VF1602E) 16 Mbit (x8/x16) Concurrent SuperFlash

The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology.

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compare

SST36VF1601E Features

* Organized as 1M x16 or 2M x8

* Dual Bank Architecture for Concurrent Read/Write Operation

* 16 Mbit Bottom Sector Protection - SST36VF1601E: 12 Mbit + 4 Mbit

* 16 Mbit Top Sector Protection - SST36VF1602E: 4 Mbit + 12 Mbit

* Single 2.7-3.6V for Read and Wri