2310FX
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st2310fx. The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting i
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2310 - N-Channel 60V MOSFET
(VBsemi)
2310-VB TO223
2310-VB TO223 Datasheet
N-Channel 60-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.076 at VGS = 10 V 60
0.085.
2310-RC - High Current Toroid Inductors
(Bourns)
†RoHS COMPLIANT
High Current Toroid Inductors
Special Features
• DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.
2310DHI - ST2310DHI
(STMicroelectronics)
..
®
ST2310DHI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s
s s s s s
NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED P.
2310HI - ST2310HI
(STMicroelectronics)
..
®
ST2310HI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s
s s s s
NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PA.
2311-RC - High Current Toroid Inductors
(Bourns)
†RoHS COMPLIANT
High Current Toroid Inductors
Special Features
• DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.
2312-RC - High Current Toroid Inductors
(Bourns)
†RoHS COMPLIANT
High Current Toroid Inductors
Special Features
• DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.
23128 - 128K STATIC READ ONLY MEMORY
(Commodore)
.
2313-RC - High Current Toroid Inductors
(Bourns)
†RoHS COMPLIANT
High Current Toroid Inductors
Special Features
• DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.
2314 - N-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM2314B
N-Channel Enhancement Mode Power MOSFET
Description
The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge.
2314-RC - High Current Toroid Inductors
(Bourns)
†RoHS COMPLIANT
High Current Toroid Inductors
Special Features
• DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.
