5NK60Z Datasheet, St5nk60z, ST Microelectronics

5NK60Z Features

  • St5nk60z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absor

PDF File Details

Part number:

5NK60Z

Manufacturer:

STMicroelectronics ↗

File Size:

486.71kb

Download:

📄 Datasheet

Description:

St5nk60z. The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition

Datasheet Preview: 5NK60Z 📥 Download PDF (486.71kb)
Page 2 of 5NK60Z Page 3 of 5NK60Z

5NK60Z Application

  • Applications Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM A

TAGS

5NK60Z
ST5NK60Z
ST Microelectronics

📁 Related Datasheet

5NK80Z - STP5NK80Z (STMicroelectronics)
STP5NK80Z STP5NK80ZFP N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features Type STP5NK80Z STP5NK80Z.

5N0431 - Power-Transistor (Infineon)
IPZ40N04S5-3R1 OptiMOS™-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V.

5N100-FC - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 5N100-FC 5A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N100-FC provide excellent RDS(ON), low gate charge and.

5N10029 - Automotive MOSFET (Infineon)
IAUA180N10S5N029 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement.

5N105K5 - N-channel Power MOSFET (STMicroelectronics)
STF5N105K5 N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data Figure 1: Internal schematic .

5N120 - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 5N120 5A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and opera.

5N120-E3 - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 5N120-E3 Preliminary 5.0A, 1200V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 5N120-E3 provide excellent RDS(ON).

5N150UF - SGF5N150UF (Fairchild Semiconductor)
SGF5N150UF IGBT SGF5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. .

5N20A - MOSFET (GOFORD)
GOFORD Description Features VDSS RDS(ON) ID @ 10V(Typ) 200V 0.44 Ω 5A • Fast switching • 100% avalanche tested • Improved dv/dt capability • Ro.

5N20V - GE5N20V (Gemos)
GEMOS .. MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE5N20V uses advanced trench te.

Stock and price

part
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
DigiKey
STP5NK60Z
1102 In Stock
Qty : 5000 units
Unit Price : $0.87
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts