B7NB60FD
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Stgb7nb60fd. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBT
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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by t.
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STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z
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A
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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
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APPLICATIONS .
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Unit: mm
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B7156ARH - Radiation-Hardened SRAM
(Beijing Microelectronics)
Ver 1.2
Radiation-Hardened SRAM
Datasheet
Part Number:B7156ARH
Page of Revise Control
Version No. 1.0
Publish Time
09.20.2016
Revised Chapter
Rev.
B716 - 2SB716
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2SB715, 2SB716, 2SB716A
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Application
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B716A - 2SB716A
(Hitachi)
2SB715, 2SB716, 2SB716A
Silicon PNP Epitaxial
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