BUH2M20AP - HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.
3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) E
