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H8NB90FI Datasheet - ST Microelectronics

H8NB90FI STH8NB90FI

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptio.

H8NB90FI Datasheet (241.64 KB)

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H8NB90FI STH8NB90FI ST Microelectronics

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