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PD84006-E

RF Power Transistor

PD84006-E Features

* Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD84006-E is a com

PD84006-E General Description

The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and relia.

PD84006-E Datasheet (241.83 KB)

Preview of PD84006-E PDF

Datasheet Details

Part number:

PD84006-E

Manufacturer:

STMicroelectronics ↗

File Size:

241.83 KB

Description:

Rf power transistor.

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PD84006-E Power Transistor ST Microelectronics

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