SD1285
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Rf & microwave transistors hf ssb applications. The SD1285 is a 12.5 V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballas
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SD12888-FRE-06-00A - LCD Module Graphic 128 x 088 Dots Reflective extended Temperature I2C
(SWISSDIS)
SWISSDIS
Swissdis AG Grasweg 7 CH-4911 Schwarzhäusern
Tel.: +41 62 919 44 00 Fax: +41 62 919 44 01 info@swissdis.ch .swissdis.ch
SPECIFICATIONS
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SD12 - 1 CHANNEL UNIDIRECTIONAL TVS
(Diodes)
ADVANCED INFORMATION
Features
350 Watts Peak Pulse Power (tp = 8x20μs) IEC 61000-4-2 (ESD): Air – 30kV, Contact – 30kV IEC 61000-4-2 (ESD), HBM.
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SD05 and SD12
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The SDxx TVS diodes are designed to re.
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● Ultra low leakage: nA level ● Operating voltage: 12V ● Low clamping voltage ● Complies with following standards:
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SD12 - Plasetic Encapsulate ESD Protection Diodes
(SeCoS)
Elektronische Bauelemente
SD12
300 W, 12V Plasetic Encapsulate ESD Protection Diodes
RoHS Compliant Product A suffix of “-C” specifies halogen & lea.
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SD03 THRU SD36
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APPLICATIONS ● Cell Phone Handsets and Accessories ● Microprocessor based equipment ● Perso.
SD12-100 - Shielded Inductors
(Cooper Electronic)
..
Description
• Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density
• Inductance r.
SD12-100-R - Low profile metalized shielded drum core power inductors
(Eaton)
Technical Data PM4311
Effective August 2017 Supersedes March 2007
SD
Low profile metalized shielded drum core power inductors
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SD12-101 - Shielded Inductors
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..
Description
• Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density
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Effective August 2017 Supersedes March 2007
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