SD56120
Features
- Excellent thermal stability
- mon source configuration Push-pull
- POUT = 100 W with 14 d B gain @ 860 MHz
- Be O-free package
Description
The SD56120 is a mon source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in mon source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity.
M246 Epoxy sealed
Figure 1. Pin connections 12
Table 1.
Device summary Order code
1-2 Drain 4-5 Gate
4 3 Source
Package M246
Branding SD56120
September 2009
Doc ID 6873 Rev 4
1/15
.st.
Contents
Contents
1 Electrical data
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1.1 Maximum ratings
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