ST2009DHI - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =35 Ω Typ.
ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T
