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ST2009DHI Datasheet - ST Microelectronics

ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =35 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T.

ST2009DHI_STMicroelectronics.pdf

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Datasheet Details

Part number:

ST2009DHI

Manufacturer:

STMicroelectronics ↗

File Size:

260.27 KB

Description:

High voltage fast-switching npn power transistor.

ST2009DHI Distributor

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ST2009DHI ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics