STB9NK60ZFP, STB9NK60Z Datasheet - ST Microelectronics

STB9NK60ZFP N-Channel Enhancement Mode MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

w w w .D e h N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D PAK/I PAK S a Zener-Protected SuperMESH™Power MOSFET at 2 2 VDSS 600 600 600 600 V V V V RDS(on) < 0.95 < 0.95 < 0.95 < 0.95 ID 7 7 7 7 A A A A Pw 125 W 30 W 125 W 125 W TO-220 et 4U . m o c STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 Ω Ω Ω Ω s s s s s s s TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED .

STB9NK60ZFP Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

STB9NK60Z_STMicroelectronics.pdf