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STB9NK60ZFP, STB9NK60Z N-Channel Enhancement Mode MOSFET

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Description

w w w .D e h N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D PAK/I PAK S a Zener-Protected SuperMESH™Power MOSFET at 2 2 VDSS 600 600 600 600 V V V V RDS(.
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

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This datasheet PDF includes multiple part numbers: STB9NK60ZFP, STB9NK60Z. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
STB9NK60ZFP, STB9NK60Z
Manufacturer
STMicroelectronics ↗
File Size
363.15 KB
Datasheet
STB9NK60Z_STMicroelectronics.pdf
Description
N-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: STB9NK60ZFP, STB9NK60Z.
Please refer to the document for exact specifications by model.

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

Applications

* Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60ZT4 STB9NK60Z-1 M

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