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STB9NK60ZFP

N-Channel Enhancement Mode MOSFET

STB9NK60ZFP Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

STB9NK60ZFP General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

STB9NK60ZFP Datasheet (363.15 KB)

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Datasheet Details

Part number:

STB9NK60ZFP

Manufacturer:

STMicroelectronics ↗

File Size:

363.15 KB

Description:

N-channel enhancement mode mosfet.
w w w .D e h N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D PAK/I PAK S a Zener-Protected SuperMESH™Power MOSFET at 2 2 VDSS 600 600 600 600 V V V V RDS(.

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STB9NK60ZFP N-Channel Enhancement Mode MOSFET ST Microelectronics

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