STB9NK60Z_STMicroelectronics.pdf
Datasheet Details
Part number:
STB9NK60ZFP, STB9NK60Z
Manufacturer:
File Size:
363.15 KB
Description:
N-channel enhancement mode mosfet.
Note:
This datasheet PDF includes multiple part numbers: STB9NK60ZFP, STB9NK60Z.
Please refer to the document for exact specifications by model.
STB9NK60ZFP, STB9NK60Z, N-Channel Enhancement Mode MOSFET
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements
w w w .D e h N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D PAK/I PAK S a Zener-Protected SuperMESH™Power MOSFET at 2 2 VDSS 600 600 600 600 V V V V RDS(on) < 0.95 < 0.95 < 0.95 < 0.95 ID 7 7 7 7 A A A A Pw 125 W 30 W 125 W 125 W TO-220 et 4U .
m o c STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 Ω Ω Ω Ω s s s s s s s TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED
STB9NK60ZFP Features
* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag
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