STB9NK60ZFP, STB9NK60Z - N-Channel Enhancement Mode MOSFET

ST Microelectronics

Datasheet Details

Part number	STB9NK60ZFP, STB9NK60Z
Manufacturer	STMicroelectronics
File Size	363.15 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	STB9NK60Z_STMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: STB9NK60ZFP, STB9NK60Z. Please refer to the document for exact specifications by model.

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP9NK60Z /.

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Published: Feb 23, 2006 |