STD150NH02L Datasheet | STMicroelectronics

DESCRIPTION The STD150NH02L utilizes the latest advanced design rules of ST’s proprietary STrip FET™ technology. This novel 0.6µ process utilizes also unique metallization techniques that couple to a "bondless" assembly technique result in outstanding performance with standard DPAK outline. It is therefore ideal in high performance DC-DC converter applications where efficiency it to be achieved at very high out currents. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 150 95 600 125 0.83 900 -55 to 175 Unit V V V V A A A W W/°C m J °C September 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/9 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.2 100 275 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 25 m A, VGS = 0 VDS = 20 V VDS = 20 V VGS = ± 20V Min. 24 1 10 ±100 Typ. Max. Unit V µA µA n A TC = 125°C ON (4) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 µA ID = 75 A ID = 75 A Min. 1 Typ. 1.8 0.003 0.005 0.0035 0.0065...