STD150NH02L Datasheet - ST Microelectronics

STD150NH02L N-CHANNEL POWER MOSFET

The STD150NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This novel 0.6µ process utilizes also unique metallization techniques that couple to a "bondless" assembly technique result in outstanding performance with standard DPAK outline. It is therefore ideal.

N-CHANNEL 24V - 0.003 Ω - 150A ClipPAK™/IPAK STripFET™ III POWER MOSFET PRELIMINARY DATA TYPE STD150NH02L s s s s s s s STD150NH02L VDSS 24 V RDS(on) < 0.0035 Ω ID 150 A s TYPICAL RDS(on) = 0.003 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 2 1 IPAK TO-251 (Suff.

STD150NH02L_STMicroelectronics.pdf