STD2NB60

N-CHANNEL MOSFET

ST Microelectronics

STD2NB60 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STD2NB60 Datasheet (291.37 KB)

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STD2NB60

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STMicroelectronics ↗

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291.37 KB

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N-channel mosfet.
STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STD2NB60 s s s s s V DSS 600 V R DS(on) < 3.6 Ω ID 2.6 A TYPICAL RDS(on) = 3.3 Ω EXTR.

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STD2NB60 N-CHANNEL MOSFET ST Microelectronics

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STD2NB60 General Description

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