STD50NH02L Datasheet (ST Microelectronics)

STD50NH02L, POWER MOSFET

The STD50NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.

This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFF

N-CHANNEL 24V - 0.0085 Ω - 50A DPAK/IPAK STripFET™ III POWER MOSFET TYPE STD50NH02L s s s s s s s STD50NH02L VDSS 24 V RDS(on) < 0.0105 Ω ID 50 A s TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 2 1 IPAK TO-251 (Suffix “-1”)