STW10NB60

N-CHANNEL Power MOSFET

ST Microelectronics

STW10NB60 General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

STW10NB60 Datasheet (93.94 KB)

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STW10NB60

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STMicroelectronics ↗

File Size:

93.94 KB

Description:

N-channel power mosfet.
® STW10NB60 N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH™ MOSFET TYPE ST W10NB60 s s s s s V DSS 600 V R DS(on) < 0.8 Ω ID 10 A TYPICAL RDS.

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STW10NB60 N-CHANNEL Power MOSFET ST Microelectronics

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STW10NB60 General Description

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