* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo
STW10NC70Z Datasheet (249.26 KB)
STW10NC70Z
249.26 KB
N-channel power mosfet.
N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW10NC70Z
s s
STW10NC70Z
VDSS 700 V
RDS(on) < 0.75 Ω
ID 10.6 A
.
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