STW10NK80Z
Features
Type STP10NK80Z STP10NK80ZFP STW10NK80Z
VDSS 800V 800V 800V
RDS(on) <0.90Ω <0.90Ω <0.90Ω
ID 9A 9A 9A
Pw 160 W 40 W 160 W
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeability
3 2 1
TO-220
3 2 1
TO-220FP
TO-247
Applications
- Switching application
Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' Super MESH™ technology, achieved through optimization of ST's well established strip-based Power MESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary Part number STP10NK80Z
STP10NK80ZFP STW10NK80Z
Marking P10NK80Z P10NK80ZFP W10NK80Z
Package TO-220 TO-220FP TO-247
Packaging Tube Tube Tube
March 2012
This...
