GD1000HFA120C6S_B39
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.
Features
- Low VCE(sat) Trench IGBT technology
- Short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using AMB technology
Typical Applications
- Hybrid and electric vehicle
- Inverter for motor drive
- Uninterruptible power supply
Equivalent Circuit Schematic
©2024 STARPOWER Semiconductor Ltd.
9/26/2024
1/11
B01
IGBT Module
Absolute Maximum Ratings TF=25o C unless otherwise noted
IGBT
Symbol VCES VGES ICN IC ICRM
Description
Collector-Emitter Voltage Gate-Emitter Voltage Implemented Collector Current Collector Current @ TF=75o C Repetitive Peak Collector Current tp limited by Tvj op Maximum Power Dissipation...
