GD150HFU120C8SD - IGBT
GD150HFU120C8SD Features
* Low VCE(sat) Trench IGBT technology
* 10μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 150oC
* Low inductance case
* Fast & soft reverse recovery anti-parallel FWD
* Isolated copper baseplate using DBC technol
